About Our Technology
The use of the II-VI compounds has been slow to develop because there has not been a source of high quality material in consistent, high volume supply. The material on the market has a high incident of crystalline imperfection. The crystal lattice is full of inclusions of tellurium, linage, subgrain structure and lattice dislocations. Until a source of high quality wafers can be developed, little increase in the use of II-VI compounds is anticipated.

One problem inhibiting the development of devices which use II-VI semiconductor material is the extremely high cost of this material. It is important to know that all of the II and VI elements used for the production of semiconductors are abundantly available and are easily purified. The major barrier to reduced cost and improved supply is therefore in the economics and quality of the processing methods. As a result with improved processing methods the use of the II-VI compounds will increase, the cost of elements will decrease and this will allow II-VI materials to potentially compete with gallium arsenide and indium phosphide in price structure.

view Med view Lg

view Med view Lg

Gallium Arsenide, another product that Galtech can produce and sell.

In the past(1990) Galtech produced Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) with no sub grain. Galtech also demonstrated its capability to produce large area crystals without twins or lineage as large as 13 square inches in surface area. Two nearly perfect boules were produced just prior to shut down in 1990. Using the proprietary methods from this effort and with the new equipment and analysis methods available today, we have reason to believe that we can develop a repeatable and economic process for the production of high quality material.

Questions or Comments: management@galtech-corp.com
P.O. Box 1953  Orem, Utah 84057
Tel: 623-825-2550

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